• DocumentCode
    970766
  • Title

    Double-heterostructure Ga0.68In0.32P/Ga0.88In0.12As0.34P0. 66/Ga0.68In0.32P orange light-emitting diodes

  • Author

    Chen, Chia-Wei ; Wu, Meng-Chyi

  • Author_Institution
    Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1990
  • Lastpage
    1991
  • Abstract
    Visible light-emitting diodes (LEDs) emitting at 619 mm and employing the InGaP/InGaAsP double heterostructure (DH) grown on a lattice-matched GaAs0.61P0.39 substrate have been fabricated for the first time. The orange DH LEDs exhibit an external quantum efficiency of 0.22% and a full width at half maximum of 48 meV (15 nm) in the electroluminescence spectra.
  • Keywords
    III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; liquid phase epitaxial growth; luminescence of inorganic solids; semiconductor growth; 0 to 300 muW; 5 to 60 mA; 619 nm; DH LEDs; Ga 0.68In 0.32P -Ga 0.88In 0.12As 0.34P 0.66 -Ga 0.68In 0.32P; GaAs 0.61P 0.39; InGaP/InGaAsP double heterostructure; LPE growth; electroluminescence spectra; external quantum efficiency; forward current dependence; full width at half maximum; lattice-matched GaAs 0.61P 0.39 substrate; light output power; orange light-emitting diodes; visible light-emitting diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931325
  • Filename
    244630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970766