Title :
Double-heterostructure Ga0.68In0.32P/Ga0.88In0.12As0.34P0. 66/Ga0.68In0.32P orange light-emitting diodes
Author :
Chen, Chia-Wei ; Wu, Meng-Chyi
Author_Institution :
Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Visible light-emitting diodes (LEDs) emitting at 619 mm and employing the InGaP/InGaAsP double heterostructure (DH) grown on a lattice-matched GaAs0.61P0.39 substrate have been fabricated for the first time. The orange DH LEDs exhibit an external quantum efficiency of 0.22% and a full width at half maximum of 48 meV (15 nm) in the electroluminescence spectra.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; liquid phase epitaxial growth; luminescence of inorganic solids; semiconductor growth; 0 to 300 muW; 5 to 60 mA; 619 nm; DH LEDs; Ga 0.68In 0.32P -Ga 0.88In 0.12As 0.34P 0.66 -Ga 0.68In 0.32P; GaAs 0.61P 0.39; InGaP/InGaAsP double heterostructure; LPE growth; electroluminescence spectra; external quantum efficiency; forward current dependence; full width at half maximum; lattice-matched GaAs 0.61P 0.39 substrate; light output power; orange light-emitting diodes; visible light-emitting diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931325
