Title :
Transport properties in GaAs-AlxGa1¿xAs heterostructures and MESFET application
Author :
Delescluse, P. ; Laviron, M. ; Chaplart, J. ; Delagebeaudeuf, D. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Mobilities of undoped GaAs-n-doped AlxGa1¿xAs heterostructures are shown to present a maximum as a function of the thickness of the undoped AlxGa1¿xAs spacer layer. This maximum increases as the temperature decreases. The transition temperature above which phonon scattering is dominant decreases as d increases. Heterostructure FETs working at 11 GHz give an 8 dB gain.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; carrier mobility; gallium arsenide; p-n heterojunctions; GaAs-AlxGa1-xAs heterostructures; MESFET 8 dB gain at 11 GHz; MESFET application; carrier mobility; phonon scattering; temperature dependence; transition temperature; transport properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810242
