Enhanced Light Extraction From Triangular GaN-Based Light-Emitting Diodes

Author

Kim, Ja-Yeon ; Kwon, Min-Ki ; Kim, Jae-Pil ; Park, Seong-Ju

Author_Institution

Gwangju Inst. of Sci. & Technol., Gwangju

Volume

19

Issue

23

fYear

2007

Firstpage

1865

Lastpage

1867

Abstract

This study investigated the characteristics of a triangular light-emitting diode (LED) and compared it to a standard quadrangular LED. The total radiant flux from the packaged triangular LED increased by 48% and 24% at input currents of 20 and 100 mA, respectively, compared to that of a quadrangular LED which was grown on patterned sapphire substrate. In light far-field beam distribution, the light extraction in the horizontal direction of the LED was much higher than that of the quadrangular LED due to the enhancement of light emission from the side walls of the triangular LED.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; GaN; light emission; light far-field beam distribution; total radiant flux; triangular GaN-based light-emitting diodes; Displays; Gallium nitride; LED lamps; Light emitting diodes; Materials science and technology; Packaging; Power generation; Refractive index; Substrates; Surface texture; Extraction efficiency; GaN; light output power; light-emitting diodes (LEDs); shaping; texturing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.907644

Filename

4380469