Title :
10 GHz bandwidth 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET
Author :
Imai, Yuki ; Tokumitsu, M. ; Onodera, K. ; Asai, Kikuo
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
5/24/1990 12:00:00 AM
Abstract :
A low-noise direct-coupled amplifier IC with a bandwidth of 10 GHz was developed using a 0.4 mu m gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; gold; integrated circuit technology; metallisation; microwave amplifiers; tungsten compounds; wideband amplifiers; 0.4 micron; 10 GHz; 20 dB; 3.2 dB; 365 mW; Au-WSiN-GaAs; Au/WSiN GaAs MESFET; bandwidth; gain; gate-length; low-noise direct-coupled amplifier ICs; noise figure; power consumption; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900456
