• DocumentCode
    970812
  • Title

    1% efficiency Al0.3Ga0.7As planar-doped-barrier electron emitters

  • Author

    Mishra, Umesh K.

  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1997
  • Lastpage
    1999
  • Abstract
    Owing to a larger bandgap and a higher breakdown field, higher emission efficiency and emission current density have been obtained from Al0.3Ga0.7As planar-doped-barrier electron emitters (PDBEEs) compared with GaAs PDBEEs. Preliminary experiments gave an emission efficiency of 1% and a current density of 2.6Acm-2 from a 5*144 mu m2 emission region with an anode bias of 100 V. Further improvement of the device performance can be achieved by optimising the device design and surface activation process.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; electron field emission; gallium arsenide; 1 percent; 100 V; Al 0.3Ga 0.7As; Al 0.3Ga 0.7As planar-doped-barrier electron emitters; PDBEEs; anode bias; bandgap; breakdown field; emission current density; emission efficiency; hot electron emission; surface activation process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931330
  • Filename
    244635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970812