Title :
1% efficiency Al0.3Ga0.7As planar-doped-barrier electron emitters
Author :
Mishra, Umesh K.
Abstract :
Owing to a larger bandgap and a higher breakdown field, higher emission efficiency and emission current density have been obtained from Al0.3Ga0.7As planar-doped-barrier electron emitters (PDBEEs) compared with GaAs PDBEEs. Preliminary experiments gave an emission efficiency of 1% and a current density of 2.6Acm-2 from a 5*144 mu m2 emission region with an anode bias of 100 V. Further improvement of the device performance can be achieved by optimising the device design and surface activation process.
Keywords :
III-V semiconductors; aluminium compounds; current density; electron field emission; gallium arsenide; 1 percent; 100 V; Al 0.3Ga 0.7As; Al 0.3Ga 0.7As planar-doped-barrier electron emitters; PDBEEs; anode bias; bandgap; breakdown field; emission current density; emission efficiency; hot electron emission; surface activation process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931330
