We have prepared Nb
3Ge, Nb
3Ge
1-xGa
xand Nb
3Ge
1-xSn
xon heated alumina substrates using CVD. Midresistive transitions were up to 21K and transition widths were as low as 0.3K. Critical currents were measured to 22 Tesla at temperatures from 4.2K to 19K. Effective upper critical fields B*
c2were measured by extrapolating

vs B data. Preliminary data show that for small Ga additions, B*
c2increased above the value at x=0. Flux pinning forces vs reduced field b=B/B*
c2do not obey scaling laws, which we explain as being due to inhomogeneous material having a distribution of T
cand B
c2values.