DocumentCode
970913
Title
HgCdTe sampling circuit
Author
Schiebel, R.A. ; Dodge, J. ; Gooch, R.
Author_Institution
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Volume
26
Issue
11
fYear
1990
fDate
5/24/1990 12:00:00 AM
Firstpage
702
Lastpage
704
Abstract
The demonstration, using HgCdTe MISFETs, of a sampling circuit with output buffer amplifier is reported. Using the circuit, correlated double sampling is demonstrated at speeds typical of those required for focal plane arrays. Using a swept sine input, the circuit´s transfer function is verified. The circuit was fabricated on epitaxially grown HgCdTe, with a cutoff wavelength of 3.56 mu m at 77 K.
Keywords
II-VI semiconductors; image sensors; infrared imaging; insulated gate field effect transistors; integrated circuit technology; mercury compounds; sample and hold circuits; semiconductor epitaxial layers; 3.56 micron; 77 K; HgCdTe MISFETs; correlated double sampling; cutoff wavelength; epitaxially grown HgCdTe; focal plane arrays; output buffer amplifier; sampling circuit; semiconductors; swept sine input;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900458
Filename
106026
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