Title :
HgCdTe sampling circuit
Author :
Schiebel, R.A. ; Dodge, J. ; Gooch, R.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
The demonstration, using HgCdTe MISFETs, of a sampling circuit with output buffer amplifier is reported. Using the circuit, correlated double sampling is demonstrated at speeds typical of those required for focal plane arrays. Using a swept sine input, the circuit´s transfer function is verified. The circuit was fabricated on epitaxially grown HgCdTe, with a cutoff wavelength of 3.56 mu m at 77 K.
Keywords :
II-VI semiconductors; image sensors; infrared imaging; insulated gate field effect transistors; integrated circuit technology; mercury compounds; sample and hold circuits; semiconductor epitaxial layers; 3.56 micron; 77 K; HgCdTe MISFETs; correlated double sampling; cutoff wavelength; epitaxially grown HgCdTe; focal plane arrays; output buffer amplifier; sampling circuit; semiconductors; swept sine input;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900458
