• DocumentCode
    971015
  • Title

    Electron Hall mobility calculations and alloy scattering in Ga0.47In0.53As

  • Author

    Takeda, Y. ; Littlejohn, M.A. ; Hauser, J.R.

  • Author_Institution
    North Carolina State University, Electrical Engineering Department, Raleigh, USA
  • Volume
    17
  • Issue
    11
  • fYear
    1981
  • Firstpage
    377
  • Lastpage
    379
  • Abstract
    Electron Hall mobilities are calculated by the iterative technique in Ga0.47In0.53As. From the curve fitting to the most recent experimental data over a wide range of temperature, the alloy scattering potential close to the Phillips electronegativity difference is derived. The alloy scattering-limited mobility has a temperature dependence of T¿1/2 and shows no anomalous behaviour.
  • Keywords
    Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; Ga0.47In0.53As; Phillips electronegativity difference; alloy scattering potential; curve fitting; electron Hall mobility; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810265
  • Filename
    4245735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971015