• DocumentCode
    971046
  • Title

    Stability of aluminium-polysilicon photovoltaic junctions

  • Author

    Thomson, David J. ; Matiowsky, M.A. ; Card, H.C.

  • Author_Institution
    University of Manitoba, Materials & Devices Research Laboratory, Department of Electrical Engineering, Winnipeg, Canada
  • Volume
    17
  • Issue
    11
  • fYear
    1981
  • Firstpage
    382
  • Lastpage
    383
  • Abstract
    Aluminium p-type polysilicon contacts display a rectifying behaviour which exhibits an aging towards reduced Schottky barrier heights and increased n-values or ideality factors. The time scale for this aging process increases dramatically with the thickness of the aluminium layer in the range 100¿1000 Å, and the overall behaviour is in accordance with the model of Ponpon and Siffert for transport of oxygen through the aluminium film to the polysilicon surface.
  • Keywords
    Schottky-barrier diodes; ageing; aluminium; elemental semiconductors; photovoltaic effects; semiconductor technology; semiconductor-metal boundaries; silicon; solar cells; Al p-poly-Si contacts; O2 transport through Al film; ageing; photovoltaic junctions; poly-Si solar cells; rectifying behaviour; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810268
  • Filename
    4245738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971046