Title :
Stability of aluminium-polysilicon photovoltaic junctions
Author :
Thomson, David J. ; Matiowsky, M.A. ; Card, H.C.
Author_Institution :
University of Manitoba, Materials & Devices Research Laboratory, Department of Electrical Engineering, Winnipeg, Canada
Abstract :
Aluminium p-type polysilicon contacts display a rectifying behaviour which exhibits an aging towards reduced Schottky barrier heights and increased n-values or ideality factors. The time scale for this aging process increases dramatically with the thickness of the aluminium layer in the range 100¿1000 Å, and the overall behaviour is in accordance with the model of Ponpon and Siffert for transport of oxygen through the aluminium film to the polysilicon surface.
Keywords :
Schottky-barrier diodes; ageing; aluminium; elemental semiconductors; photovoltaic effects; semiconductor technology; semiconductor-metal boundaries; silicon; solar cells; Al p-poly-Si contacts; O2 transport through Al film; ageing; photovoltaic junctions; poly-Si solar cells; rectifying behaviour; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810268
