• DocumentCode
    971075
  • Title

    Low-frequency noise spectrum of GaAs FETs

  • Author

    Graffeuil, J.

  • Author_Institution
    CNRS, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
  • Volume
    17
  • Issue
    11
  • fYear
    1981
  • Firstpage
    387
  • Lastpage
    388
  • Abstract
    In GaAs MESFETs low-frequency noise spectra of various forms are observed. In some cases they are of the form (A/f) {1¿(2/¿) tan¿1 (¿¿0)}. The bias dependence of A and ¿0 is attributed to the variation in channel thickness. Usefulness of low-frequency spectra for MESFET design and application is outlined.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs MESFETs; bias dependence; low-frequency noise spectra;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810271
  • Filename
    4245741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971075