Title :
Light Extraction Improvement From GaN-Based Light-Emitting Diodes With Nano-Patterned Surface Using Anodic Aluminum Oxide Template
Author :
Dai, Tao ; Zhang, Bei ; Kang, Xiang Ning ; Bao, Kui ; Zhao, Wen Zhu ; Xu, Dong Sheng ; Zhang, Guo Yi ; Gan, Zi Zhao
Author_Institution :
Sch. of Phys., Peking Univ., Beijing
Abstract :
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by forming surface nano-structures using an anodic aluminum oxide (AAO) template as a dry etching mask. Nano-pores were simultaneously formed on indium tin oxide and GaN surfaces of LED with different pore depths by the same procedural steps, with a pore density and pore diameter of 1.1×109/cm2 and 163 plusmn 31 nm, respectively. The nano-patterned LEDs achieved a top-face light output power enhancemetop-face light output power enhancementnt of 72% compared to the conventional LEDs at 20 mA. The light extraction effects of the nano-structures on the trapped optical modes in LED were revealed by scanning electron microscopy and microscopic electroluminescence.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; etching; gallium compounds; indium compounds; light emitting diodes; masks; nanopatterning; scanning electron microscopy; wide band gap semiconductors; Al2O3; GaN; ITO; LED; anodic aluminum oxide template; current 20 mA; dry etching mask; light extraction improvement; light-emitting diodes; microscopic electroluminescence; nanopatterned surface; nanopore formation; scanning electron microscopy; top-face light output power enhancement; trapped optical modes; Anodic aluminum oxide (AAO); GaN; light- emitting diodes (LEDs); nano-technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2005645
