DocumentCode :
971207
Title :
Design and Continuous-Wave Room-Temperature Performance of Ga(AlInAs)Sb DFB Lasers at 2.8 
m
Author :
Hümmer, Michael ; Rosner, K. ; Lehnhardt, Thomas ; Müller, Mirjam ; Forchel, Alfred
Author_Institution :
Tech. Phys., Univ. Wurzburg, Wurzburg
Volume :
21
Issue :
1
fYear :
2009
Firstpage :
36
Lastpage :
38
Abstract :
We have fabricated continuous-wave GaInAsSb-AlGaAsSb distributed-feedback (DFB) lasers in the 2.8- mum range, using a DFB concept requiring no subsequent overgrowth steps, by defining first-order Cr-Bragg gratings laterally to a ridge waveguide. We have simulated the confinement factor GammaCr of the optical mode and the Cr-grating for various ridge widths and investigated the effect on laser properties and single-mode yield in order to optimize DFB lasers in this wavelength region. In terms of low threshold current and high output power, we found an optimum ridge width around 7 mum. These lasers show the smallest average threshold current around 33 mA and a high average output power around 7 mW per facet.
Keywords :
Bragg gratings; III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical waveguides; ridge waveguides; semiconductor lasers; Cr; DFB laser design; GaInAsSb-AlGaAsSb; confinement factor; continuous-wave laser performance; distributed-feedback lasers; first-order Bragg gratings; ridge waveguide; single-mode yield; temperature 293 K to 298 K; wavelength 2.8 mum; Antimonide-based lasers; GaInAsSb; continuous-wave (CW) operation; distributed-feedback (DFB) lasers; double quantum-well lasers; mid-infrared diode lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2005846
Filename :
4663543
Link To Document :
