Title :
Monolithic GaAs travelling-wave amplifier
Author :
Ayasli, Y. ; Vorhaus, J.L. ; Mozzi, R. ; Reynolds, L.
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Abstract :
A monolithic GaAs travelling-wave amplifier with distributed input and output lines is described, and its experimental performance in the 0.5¿14 GHz range is reported.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; distributed amplification; microwave amplifier; monolithic GaAs travelling-wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810287
