Title :
Contact potential measurement of cleaved mirror surface of 1.3 μm buried heterostructure laser diode by Kelvin probe force microscopy
Author :
Mizutani, T. ; Kato, K. ; Yamagata, T. ; Kishimoto, S. ; Yamamoto, N. ; Kondo, Y.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
fDate :
12/5/2002 12:00:00 AM
Abstract :
Contact potential images of a cleaved mirror surface of a 1.3 μm buried heterostructure laser diode by Kelvin probe force microscopy have been successfully obtained. The embedded current blocking layer and mesa-etched active region were clearly recognised.
Keywords :
atomic force microscopy; contact potential; laser mirrors; laser transitions; laser variables measurement; quantum well lasers; semiconductor device measurement; voltage measurement; 1.3 μm buried heterostructure laser diode; 1.3 micron; InGaAsP-InGaAsP; InP; Kelvin probe force microscopy; cleaved mirror surface; contact potential measurement; embedded current blocking layer; mesa-etched active region; p-InP cladding layer; undoped InGaAsP/InGaAsP strained layer multiple quantum well active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021031
