High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

Author

Hong, Merit ; de Fresart, Edouard ; Steele, John ; Zlotnicka, Anna ; Stein, Cliff ; Tam, Gordon ; Racanelli, Marco ; Knoch, Lynnita ; See, Yee-Chaung ; Evans, Keenan

Author_Institution

Motorola Inc., Mesa, AZ, USA

Volume

14

Issue

9

fYear

1993

Firstpage

450

Lastpage

452

Abstract

High-performance Si and SiGe epitaxial base bipolar transistors have been fabricated using a commercially available, reduced pressure, epitaxial reactor. The SiGe devices exhibit exceptional Early voltages in the range of 400-500 V, and an f/sub T/ of 31 GHz with a BV/sub CEO/ of 7.6 V and BV/sub CBO/ of 16 V. These results demonstrate that SiGe has potential as a commercially viable technology for analog, digital, and mixed-signal applications.<>

Keywords

bipolar transistors; germanium alloys; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon alloys; solid-state microwave devices; vapour phase epitaxial growth; 31 GHz; 400 to 500 V; Early voltages; Si; SiGe; epitaxial base bipolar transistors; reduced-pressure CVD reactor; Bipolar transistors; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Inductors; Infrared heating; Isolation technology; Molecular beam epitaxial growth; Silicon germanium; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244710

Filename

244710