• DocumentCode
    971289
  • Title

    High-speed Ga0.47In0.53as photoconductive detector for picosecond light pulses

  • Author

    Klein, H.-J. ; Kaumanns, R. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    17
  • Issue
    12
  • fYear
    1981
  • Firstpage
    421
  • Lastpage
    422
  • Abstract
    A planar GaInAs photodetector suitable for the detection of light pulses in the picosecond range is presented. The device investigated exhibits a photocurrent rise time of ~ 20 ps and an inner gain-bandwidth product of ¿B ~ 125 GHz. At a wavelength of 820 nm the sensitivity is 3 A/W.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; photodetectors; Ga0.47In0.53As photoconductive detector; III-V semiconductor; inner gain-bandwidth product; photocurrent rise time; picosecond light pulses; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810292
  • Filename
    4245763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971289