Title :
High-speed Ga0.47In0.53as photoconductive detector for picosecond light pulses
Author :
Klein, H.-J. ; Kaumanns, R. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A planar GaInAs photodetector suitable for the detection of light pulses in the picosecond range is presented. The device investigated exhibits a photocurrent rise time of ~ 20 ps and an inner gain-bandwidth product of ¿B ~ 125 GHz. At a wavelength of 820 nm the sensitivity is 3 A/W.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; photodetectors; Ga0.47In0.53As photoconductive detector; III-V semiconductor; inner gain-bandwidth product; photocurrent rise time; picosecond light pulses; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810292
