Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation

Author

Jones, Erin C. ; Cheung, Nathan W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

9

fYear

1993

Firstpage

444

Lastpage

446

Abstract

Plasma immersion ion implantation (PIII) is an efficient method for fabricating high-quality p/sup +//n diodes with junction depths below 100 nm. SiF/sub 4/ is implanted to create an amorphous Si layer to retard B channeling and diffusion, and then BF/sub 3/ is implanted. Ultrashallow p/sup +//n junctions are formed by annealing at 1060 degrees C for 10 s. With the shallow implants, no extended defects are observed in device or peripheral areas due to rapid outdiffusion of fluorine. Diode electrical characteristics yield forward ideality factor of 1.05-1.06 and leakage current density below 2 nA/cm/sup 2/ in the diode bulk. Minority-carrier lifetime below the junction is greater than 250 mu s.<>

Keywords

annealing; boron; elemental semiconductors; ion implantation; p-n junctions; semiconductor diodes; semiconductor doping; silicon; 10 s; 100 nm; 1060 degC; 250 mus; B channelling retardation; BF/sub 3/; Si-Si:B; SiF/sub 4/; amorphous Si layer; annealing; electrical characteristics; high-quality; ion implantation; p/sup +//n diodes; p/sup +//n junctions; plasma immersion; shallow implants; ultrashallow junctions; Amorphous materials; Boron; Diodes; Electrons; Implants; Ion implantation; Leakage current; Plasma applications; Plasma immersion ion implantation; Plasma properties;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244712

Filename

244712