• DocumentCode
    971292
  • Title

    Control of coercivity in NiFe films for single-level masking bubble devices

  • Author

    Ahn, Kie Y. ; Tuxford, Anthony M.

  • Author_Institution
    IBM Research Center, Yorktown Heights, NY, USA
  • Volume
    15
  • Issue
    2
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    997
  • Lastpage
    999
  • Abstract
    Methods of reducing Hcin thick NiFe films deposited on evaporated Au have been studied for applications in conductor-first single-level masking bubble device fabrication. Results obtained using surface modification techniques, such as ion implantation, plasma etching, and semiconducting intermediate layers (TiOx) are described. In addition, the performance of actual 5-μm and 2-μm devices is discussed.
  • Keywords
    Coercive forces; Magnetic bubble device fabrication; Plasma applications, materials processing; Semiconductor films; Coercive force; Conductive films; Etching; Fabrication; Gold; Ion implantation; Plasma applications; Plasma devices; Plasma immersion ion implantation; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1979.1060292
  • Filename
    1060292
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971292