Title :
Control of coercivity in NiFe films for single-level masking bubble devices
Author :
Ahn, Kie Y. ; Tuxford, Anthony M.
Author_Institution :
IBM Research Center, Yorktown Heights, NY, USA
fDate :
3/1/1979 12:00:00 AM
Abstract :
Methods of reducing Hcin thick NiFe films deposited on evaporated Au have been studied for applications in conductor-first single-level masking bubble device fabrication. Results obtained using surface modification techniques, such as ion implantation, plasma etching, and semiconducting intermediate layers (TiOx) are described. In addition, the performance of actual 5-μm and 2-μm devices is discussed.
Keywords :
Coercive forces; Magnetic bubble device fabrication; Plasma applications, materials processing; Semiconductor films; Coercive force; Conductive films; Etching; Fabrication; Gold; Ion implantation; Plasma applications; Plasma devices; Plasma immersion ion implantation; Semiconductor films;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1979.1060292
