Title :
High-power subnanosecond switch
Author :
Grekhov, I.V. ; Kardo-Sysoev, Alexei F. ; Kostina, L.S. ; Shenderey, S.V.
Author_Institution :
Academy of Sciences of the USSR, A.F. loffe Physico-Technical Institute, Leningrad, USSR
Abstract :
A triggering mechanism, unconnected with carrier transfer effects at long distances, for power commutation of 105¿106 W in the subnanosecond range, is believed to have been found from the study of the avalanche breakdown process. The switching time does not increase when the diodes are connected in series.
Keywords :
semiconductor switches; avalanche breakdown process; carrier transfer effects; diodes; high power subnanosecond switch; power commutation; triggering mechanism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810293
