• DocumentCode
    971296
  • Title

    High-power subnanosecond switch

  • Author

    Grekhov, I.V. ; Kardo-Sysoev, Alexei F. ; Kostina, L.S. ; Shenderey, S.V.

  • Author_Institution
    Academy of Sciences of the USSR, A.F. loffe Physico-Technical Institute, Leningrad, USSR
  • Volume
    17
  • Issue
    12
  • fYear
    1981
  • Firstpage
    422
  • Lastpage
    423
  • Abstract
    A triggering mechanism, unconnected with carrier transfer effects at long distances, for power commutation of 105¿106 W in the subnanosecond range, is believed to have been found from the study of the avalanche breakdown process. The switching time does not increase when the diodes are connected in series.
  • Keywords
    semiconductor switches; avalanche breakdown process; carrier transfer effects; diodes; high power subnanosecond switch; power commutation; triggering mechanism;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810293
  • Filename
    4245764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971296