DocumentCode
971297
Title
Nonreciprocal TE-TM mode converter with semiconductor guiding layer
Author
Yokoi, H. ; Mizumoto, T. ; Iwasaki, H.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Volume
38
Issue
25
fYear
2002
fDate
12/5/2002 12:00:00 AM
Firstpage
1670
Lastpage
1672
Abstract
A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.
Keywords
Faraday effect; III-V semiconductors; cerium; claddings; gallium arsenide; garnets; indium compounds; integrated optics; magnetic thin films; magneto-optical isolators; wafer bonding; yttrium compounds; 1.55 micron; AlInAs; AlInAs-oxide; Ce:YIG/GaInAsP/InP; Cotton-Mouton effect; Faraday effect; YFe5O12:Ce-GaInAsP-InP; YIG:Ce-GaInAsP-InP; air; lower cladding layer; magnetic garnet/GalnAsP/lnP waveguide; magneto-optic waveguide; mode conversion; nonreciprocal TE-TM mode converter; optical isolator; propagation distance; semiconductor guiding layer; wafer bonding technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20021035
Filename
1137455
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