Title :
Nonreciprocal TE-TM mode converter with semiconductor guiding layer
Author :
Yokoi, H. ; Mizumoto, T. ; Iwasaki, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
12/5/2002 12:00:00 AM
Abstract :
A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.
Keywords :
Faraday effect; III-V semiconductors; cerium; claddings; gallium arsenide; garnets; indium compounds; integrated optics; magnetic thin films; magneto-optical isolators; wafer bonding; yttrium compounds; 1.55 micron; AlInAs; AlInAs-oxide; Ce:YIG/GaInAsP/InP; Cotton-Mouton effect; Faraday effect; YFe5O12:Ce-GaInAsP-InP; YIG:Ce-GaInAsP-InP; air; lower cladding layer; magnetic garnet/GalnAsP/lnP waveguide; magneto-optic waveguide; mode conversion; nonreciprocal TE-TM mode converter; optical isolator; propagation distance; semiconductor guiding layer; wafer bonding technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021035
