Title :
Photonic integration using inductively coupled argon plasma enhanced quantum well intermixing
Author :
Djie, H.S. ; Sookdhis, C. ; Mei, T. ; Arokiaraj, J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
12/5/2002 12:00:00 AM
Abstract :
The capability of photonic integration using inductively coupled argon plasma enhanced quantum well intermixing (ICP-QWI) was demonstrated by fabricating a broad area extended cavity laser. The differential bandgap shift of 86 nm and the passive waveguide loss of 2.98 cm-1 have been obtained. Results indicate high quality of devices processed using the ICP-QWI technique.
Keywords :
chemical interdiffusion; energy gap; integrated optics; laser cavity resonators; optical fabrication; optical losses; plasma materials processing; quantum well lasers; semiconductor quantum wells; Ar; ICP-QWI technique; InGaAs-InGaAsP; SiO2; broad area extended cavity laser fabrication; differential bandgap shift; high quality; inductively coupled argon plasma enhanced quantum well intermixing; passive waveguide loss; photonic integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021112
