SiGe heterojunction bipolar transistors with thin alpha -Si emitters

Author

Tang, Z.R. ; Kamins, Theodore ; Li, P. ; Salama, C.A.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

14

Issue

9

fYear

1993

Firstpage

438

Lastpage

440

Abstract

A SiGe-base heterojunction bipolar transistor with an extremely thin n hydrogenated amorphous Si ( alpha -Si:H) emitter is proposed and characterized. The structure results in enhanced emitter injection efficiency, current gain, and frequency performance. The fabricated devices exhibited maximum current gains of 100 and Early voltages of 55 V. The unity current gain cutoff frequency (f/sub T/) for a device with an emitter size of 2 mu m*4 mu m was 8.5 GHz.<>

Keywords

Ge-Si alloys; heterojunction bipolar transistors; hydrogen; semiconductor materials; silicon; solid-state microwave devices; thermionic emission; 55 V; 8.5 GHz; Early voltages; HBT; SiGe-Si:H; amorphous Si; current gain; emitter injection efficiency; frequency performance; heterojunction bipolar transistors; thin alpha -Si emitters; unity current gain cutoff frequency; Amorphous materials; Current density; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Performance gain; Photonic band gap; Silicon germanium; Temperature; Thermionic emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244714

Filename

244714