Title :
Successive charging/discharging of gate oxides in SOI MOSFET´s by sequential hot-electron stressing of front/back channel
Author :
Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.
Author_Institution :
Dept. of Electr. Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
Hot-hole injection into the opposite channel of silicon-on-insulator (SOI) MOSFETs under hot-electron stress is reported. Sequential front/back-channel hot-electron stressing results in successive hot-electron/-hole injection, causing the threshold voltage to increase and decrease accordingly. This ability to inject hot holes into the opposite gate oxide can be used as an additional tool for studying the degradation mechanisms. Furthermore, it can be explored for possible use in designing SOI flash memory cells with back-channel-based erasing schemes.<>
Keywords :
elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor storage; semiconductor-insulator boundaries; silicon; MOSFETs; SOI; Si-SiO/sub 2/; back-channel-based erasing schemes; degradation mechanisms; flash memory cell design; front channel; gate oxides; hot hole injection; sequential hot-electron stressing; threshold voltage; Degradation; Electron traps; Electrostatics; Flash memory cells; Hot carriers; MOSFET circuits; Secondary generated hot electron injection; Stress; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
