Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal

Author

Verzellesi, Giovanni ; Turetta, Roberto ; Pavan, Paolo ; Collini, Amos ; Chantre, Alain ; Marty, Arlette ; Canali, Claudio ; Zanoni, Enrico

Author_Institution

Dipartimento di Elettronica ed Inf., Padova Univ., Italy

Volume

14

Issue

9

fYear

1993

Firstpage

431

Lastpage

434

Abstract

A method for the evaluation of the DC base parasitic resistance, R/sub B/, of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R/sub B/ to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R/sub B/ in the impact-ionization regime, where current crowding due to negative base current induces an increase in R/sub B/ at increasing emitter current.<>

Keywords

bipolar transistors; electric resistance measurement; impact ionisation; semiconductor device testing; DC base parasitic resistance; base current reversal; bipolar transistors; collector-base voltage; current crowding; emitter current; impact-ionization regime; negative base current; Associate members; Bipolar transistors; Current density; Current measurement; Electrical resistance measurement; Irrigation; Oxidation; Proximity effect; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244716

Filename

244716