• DocumentCode
    971343
  • Title

    Low threshold 2.72 μm GaInAsSb/AlGaAsSb multiple-quantum-well laser

  • Author

    Grau, M. ; Lin, C. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
  • Volume
    38
  • Issue
    25
  • fYear
    2002
  • fDate
    12/5/2002 12:00:00 AM
  • Firstpage
    1678
  • Lastpage
    1679
  • Abstract
    Ridge waveguide GaInAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm2 has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 mm; 2.72 micron; 30 micron; GaInAsSb-AlGaAsSb; GalnAsSb/AlGaAsSb multiple-quantum-well laser; cavity length; continuous wave; emission wavelength; low threshold; pulse mode; ridge waveguide GaInAsSb/AlGaAsSb laser diodes; room temperature; solid source MBE; stripe width; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20021126
  • Filename
    1137460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971343