Title :
Low threshold 2.72 μm GaInAsSb/AlGaAsSb multiple-quantum-well laser
Author :
Grau, M. ; Lin, C. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
fDate :
12/5/2002 12:00:00 AM
Abstract :
Ridge waveguide GaInAsSb/AlGaAsSb laser diodes, working continuous wave at room temperature with an emission wavelength of 2.72 μm, are presented. A threshold current density as low as 356 A/cm2 has been obtained for devices with 30 μm stripe width and 1.5 mm cavity length in pulse mode at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 mm; 2.72 micron; 30 micron; GaInAsSb-AlGaAsSb; GalnAsSb/AlGaAsSb multiple-quantum-well laser; cavity length; continuous wave; emission wavelength; low threshold; pulse mode; ridge waveguide GaInAsSb/AlGaAsSb laser diodes; room temperature; solid source MBE; stripe width; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021126
