Title :
Submicrometre lift-off line with T-shaped cross-sectional form
Author :
Matsumura, Mieko ; Tsutsui, K. ; Naruke, Y.
Author_Institution :
Tokyo Institute of Technology, Faculty of Engineering, Tokyo, Japan
Abstract :
A fine metal line with T-shaped cross-sectional form was fabricated by a lift-off technique using the double-layer electron beam resist method. The minimum lower and upper widths of the T-shaped cross-section were 0.2 ¿m and 0.7 ¿m, respectively, and, keeping the lower width within 0.3 ¿m, we could increase the upper width at will.
Keywords :
electron beam lithography; field effect integrated circuits; integrated circuit technology; T-shaped cross-sectional form; double-layer electron beam resist method; field effect integrated circuits; lift-off technique; submicrometer lift-off line;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810298
