• DocumentCode
    971380
  • Title

    Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes

  • Author

    Lee, T.P. ; Burrus, C.A. ; Ogawa, Koichi ; Dentai, A.G.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    17
  • Issue
    12
  • fYear
    1981
  • Firstpage
    431
  • Lastpage
    432
  • Abstract
    Long-wavelength back-illuminated PIN photodiodes capable of detecting optical signals at multigigabit modulation rates have been fabricated and tested in a stripline circuit. A transit-time-limited response time of about 30 ps has been realised in a 25 ¿m-diameter diode.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodiodes; III-V semiconductors; back-illuminated InGaAs/InP PIN punch-through photodiodes; multigigabit modulation rates; optical signals; stripline circuit; transit-time-limited response time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810299
  • Filename
    4245770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971380