Title :
The effect of fluorine on MOSFET channel length
Author :
Lin, Der-Gao ; Rost, Timothy A. ; Lee, Howard S. ; Lin, Dong-Yau ; Tsao, Alwin J. ; McKee, Benjamin
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The effect of fluorine on MOS device channel length has been evaluated. Fluorine has been introduced into the transistor by self-aligned ion implantation after the lightly doped drain (LDD) implant. The impact of fluorine in the LDD region, and its effect on the electrically determined channel length (L/sub eff/), has been examined. Measurements taken from 0.6- mu m LDD MOSFETs show a significant dependence of the L/sub eff/ on fluorine implant dose. The n/sup +/ resistor also shows more width reduction compared to unfluorinated samples. The decrease in channel length reduction by adding fluorine in the LDD region may yield way to relieve short-channel effects for the continuous scaling of CMOS devices into the deep-submicrometer region.<>
Keywords :
elemental semiconductors; fluorine; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 0.6 micron; F implant dose; LDD region; MOS device; MOSFET; Si:F; channel length; lightly doped drain; n/sup +/ resistor; self-aligned ion implantation; short-channel effects; transistor; width reduction; Degradation; Dielectric breakdown; Hafnium; Hot carriers; Implants; Ion implantation; MOS devices; MOSFET circuits; Resistors; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
