Title :
Thermal resistivity of quaternary solid solutions InGaSbAs and GaAlSbAs lattice-matched to GaSb
Author :
Both, W. ; Bochkarev, A. ; Sverdlov, B.
Author_Institution :
Central Inst. of Optics & Spectrosc., Acad. of Sci., Berlin, East Germany
fDate :
3/29/1990 12:00:00 AM
Abstract :
Measurement of the thermal resistivity of the materials InGaSbAs and GaAlSbAs is reported. These materials have thermal resistivities of three to four times that of the GaSb substrate to which they were lattice matched. This makes them particularly suitable for use as the active medium in semiconductor light sources.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; thermal conductivity of solids; GaAlSbAs-GaSb; GaSb substrate; III-V semiconductors; InGaSbAs-GaSb; active medium; lattice matching; quaternary solid solutions; semiconductor light sources; thermal resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900272
