DocumentCode
971429
Title
Thermal resistivity of quaternary solid solutions InGaSbAs and GaAlSbAs lattice-matched to GaSb
Author
Both, W. ; Bochkarev, A. ; Sverdlov, B.
Author_Institution
Central Inst. of Optics & Spectrosc., Acad. of Sci., Berlin, East Germany
Volume
26
Issue
7
fYear
1990
fDate
3/29/1990 12:00:00 AM
Firstpage
418
Lastpage
419
Abstract
Measurement of the thermal resistivity of the materials InGaSbAs and GaAlSbAs is reported. These materials have thermal resistivities of three to four times that of the GaSb substrate to which they were lattice matched. This makes them particularly suitable for use as the active medium in semiconductor light sources.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; thermal conductivity of solids; GaAlSbAs-GaSb; GaSb substrate; III-V semiconductors; InGaSbAs-GaSb; active medium; lattice matching; quaternary solid solutions; semiconductor light sources; thermal resistivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900272
Filename
50204
Link To Document