Title :
65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Author :
Leich, M. ; Hurm, V. ; Sohn, J. ; Feltgen, T. ; Bronner, W. ; Köhler, K. ; Walcher, H. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
12/5/2002 12:00:00 AM
Abstract :
Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GaInAs/AlGaInAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 μm wavelength.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; distributed amplifiers; flip-chip devices; gallium arsenide; indium compounds; optical fibre communication; optical receivers; photodiodes; 1.55 micron; 65 GHz; GaInAs-AlGaInAs-AlInAs; GaInAs/AlGaInAs/AlInAs; HEMT distributed amplifier; O/E conversion gain; flip-chip mounted waveguide photodiode; input impedance; multimode waveguide photodiodes; optical receiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021097
