Title :
Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors
Author :
Huang, Z. ; Ueno, Y. ; Kaneko, K. ; Jokerst, N.M. ; Tanahashi, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
12/5/2002 12:00:00 AM
Abstract :
The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit interconnections; metal-semiconductor-metal structures; optical couplers; optical interconnections; photodetectors; 1 Gbit/s; InGaAs; bandwidth; coupling; electrical interconnection substrates; embedded optical interconnections; fabrication process; interconnect design; metal-semiconductor-metal photodetectors; millihaul interconnections; polymer interconnection waveguide; waveguide integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021047
