DocumentCode :
971568
Title :
High DC power 325 nm emission deep UV LEDs over sapphire [AlGaN]
Author :
Chitnis, A. ; Adivarahan, V. ; Zhang, J.P. ; Wu, S. ; Sun, J. ; Pachipulusu, R. ; Mandavilli, V. ; Gaevski, M. ; Shatalov, M. ; Asif Khan, M.
Volume :
38
Issue :
25
fYear :
2002
fDate :
12/5/2002 12:00:00 AM
Firstpage :
1709
Lastpage :
1711
Abstract :
Flip-chip 325 nm emission LEDs over sapphire with powers of 0.84 and 6.68 mW at 180 mA DC and 1 A pulsed pump currents are reported. A thermal management study shows the DC output power to be limited by the package heat dissipation.
Keywords :
aluminium compounds; cooling; flip-chip devices; gallium compounds; light emitting diodes; thermal management (packaging); wide band gap semiconductors; 0.84 mW; 1 A; 180 mA; 325 nm; 6.68 mW; AlGaN; DC power; deep UV LEDs; flip-chip devices; output power; package heat dissipation; pulsed pump currents; sapphire substrate; thermal management study;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20021100
Filename :
1137480
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=971568
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