• DocumentCode
    971610
  • Title

    Characteristics of field-effect transistor using fluorinated amorphous-silicon (a-Si:F)

  • Author

    Matsumura, Hiroshi ; Kanamori, Mitsuru ; Furukawa, S.

  • Author_Institution
    Tokyo Institute of Technology, Department of Applied Electronics, Yokohama, Japan
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    457
  • Lastpage
    458
  • Abstract
    Thin-film field-effect transistors are fabricated by use of fluorinated amorphous-silicon alloy (a-Si:F) containing no hydrogen. The characteristics of transistors such as on-off current ratio are comparable to those of hydrogenated amorphous-silicon transistors and are unchanged after 600°C annealing.
  • Keywords
    amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; silicon; thin film transistors; IGFET; Si:F; fluorinated amorphous-silicon alloy; on-off current ratio; semiconductor technology; thin film transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810320
  • Filename
    4245792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971610