Title :
Characteristics of field-effect transistor using fluorinated amorphous-silicon (a-Si:F)
Author :
Matsumura, Hiroshi ; Kanamori, Mitsuru ; Furukawa, S.
Author_Institution :
Tokyo Institute of Technology, Department of Applied Electronics, Yokohama, Japan
Abstract :
Thin-film field-effect transistors are fabricated by use of fluorinated amorphous-silicon alloy (a-Si:F) containing no hydrogen. The characteristics of transistors such as on-off current ratio are comparable to those of hydrogenated amorphous-silicon transistors and are unchanged after 600°C annealing.
Keywords :
amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; silicon; thin film transistors; IGFET; Si:F; fluorinated amorphous-silicon alloy; on-off current ratio; semiconductor technology; thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810320
