Performance characteristics of high power CW, 1 cm wide monolithic AlGaAs laser diode arrays with a 2 mm total aperture width

Author

Sakamoto, Makoto ; Cardinal, M.R. ; Welch, D.F. ; Scifres, D.R.

Author_Institution

Spectra Diode Labs., San Jose, CA, USA

Volume

26

Issue

7

fYear

1990

fDate

3/29/1990 12:00:00 AM

Firstpage

422

Lastpage

424

Abstract

One cm wide monolithic laser diode arrays emitting around 810 nm with a 2 mm total aperture width have been characterised under CW conditions. CW operation up to 16 W has been achieved at a heatsink temperature of 70 degrees C. Several arrays have been lifetested at 10 W CW at a 20 degrees C heatsink temperature for a few thousand hours and have projected lifetimes of between 5000 and 17000 hours. The temperature dependence of the degradation rate was characterised, from which data an activation energy of 0.2 eV was obtained.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor device testing; semiconductor junction lasers; 1 cm; 10 W; 16 W; 2 mm; 20 degC; 5000 to 17000 h; 70 degC; AlGaAs laser diode arrays; CW conditions; CW operation; activation energy; degradation rate; diode array width; heatsink temperature; lifetimes; monolithic laser diode arrays; semiconductor laser; temperature dependence; total aperture width;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900275

Filename

50207