Title :
A 1.8-W, 6-18-GHz HBT MMIC power amplifier with 10-dB gain and 37% peak power-added efficiency
Author :
Salib, Mike ; Gupta, Aditya ; Ali, Fazal ; Dawson, Dale
Author_Institution :
Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
A two-stage 6-18-GHz high-efficiency AlGaAs-GaAs HBT MMIC power amplifier has been designed and tested. At 7-V collector bias, this fully matched monolithic amplifier delivered an output power of 1.8+or-0.6 W over the band. The peak output power was 2.45 W at 13 GHz with an associated gain of 11.1 dB and 36.7% power-added efficiency (PAE). Amplifiers from five different wafers showed similar performance.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; 1.8 to 2.45 W; 11.1 dB; 36.7 to 37 percent; 6 to 18 GHz; 7 V; AlGaAs-GaAs; HBT MMIC; fully matched monolithic amplifier; power amplifier; two-stage; Band pass filters; Capacitance; Circuit synthesis; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; MMICs; Power amplifiers; Power generation;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
