• DocumentCode
    971708
  • Title

    GaAs read-type impatt diode for 130 GHz CW operation

  • Author

    Chang, Kuo-Pin ; Kung, J.K. ; Asher, P.G. ; Hayashibara, G.M. ; Ying, R.S.

  • Author_Institution
    Hughes Aircraft Company, Electron Dynamics Division, Torrance, USA
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    471
  • Lastpage
    473
  • Abstract
    A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.
  • Keywords
    III-V semiconductors; IMPATT diodes; Schottky-barrier diodes; gallium arsenide; semiconductor technology; vapour phase epitaxial growth; 0.5% efficiency; 130 GHz; 5 mW; GaAs; III-V semiconductors; Schottky barrier read type IMPATT diode; semiconductor technology; vapour-phase epitaxial material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810329
  • Filename
    4245801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971708