Characterization of planar antennas fabricated on GaAs epilayers containing As clusters for picosecond short-pulse applications

Author

Carin, Lawrence ; Kralij, David R. ; Melloch, Michael R. ; Woodall, Jerry M.

Author_Institution

Dept. of Electr. Eng., Polytech. Univ., Brooklyn, NY, USA

Volume

3

Issue

9

fYear

1993

Firstpage

339

Lastpage

341

Abstract

Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures of 220, 250, and 270 degrees C. These antennas are switched photoconductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire (SOS). It is shown that in the picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter.<>

Keywords

horn antennas; laser beam applications; microstrip antennas; molecular beam epitaxial growth; semiconductor growth; switching; 220 to 270 degC; As clusters; GaAs:As epilayers; MBE; horn antennas; microwave antennas; molecular beam epitaxy; photoconductive switching; picosecond laser; picosecond short-pulse applications; planar antennas; radiated intensity; radiated pulse duration; substrate growth temperature; Antennas and propagation; Gallium arsenide; Horn antennas; Molecular beam epitaxial growth; Photoconductivity; Planar arrays; Pulse measurements; Radiation detectors; Substrates; Temperature sensors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.244872

Filename

244872