Title :
Schottky-barrier elevation by ion implantation and implant segregation
Author_Institution :
Stanford University, Stanford, USA
Abstract :
PtSi Schottky barriers on n-type silicon have been formed with barrier heights up to 1 V, using a thin p-type interfacial layer for barrier elevation. The p-type layers are formed via shallow ion-implantation, followed by segregation to the metal-silicon interface when the silicide is formed. This results in extremely thin p-regions that enable the diodes to have near ideal forward current/voltage characteristics, with n-values of 1.02 to 1.04.
Keywords :
Schottky-barrier diodes; ion implantation; platinum alloys; semiconductor doping; semiconductor-metal boundaries; silicon; silicon alloys; B implantation; PtSi Schottky barriers; PtSi-n-Si; barrier elevation; diodes; doping; implant segregation; ion implantation; metal semiconductor contacts; p-type interfacial layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810337
