7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier

The design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 7.4 kV, 330 A (pulsed) capability is reported. A highly-doped p-type epitaxial anode layer and junction termination extension were used to obtain good on-state and stable reverse blocking characteristics. A forward voltage drop of 4.5 V was observed at 100 A/cm² (36 A). Measurements in the 25-200°C range show little change in reverse leakage characteristics up to 4.5 kV. Reverse recovery measurements for a forward current density of 100 A/cm² show a modest 33% increase (from 18 to 24 A) in the peak reverse recovery current, and only a 113% increase (from 1.8 to 3.8 μC) in Q_π at 200°C compared to 25°C.