7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier

Author

Singh, R. ; Capell, D.C. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.

Author_Institution

Cree Inc., Durham, NC, USA

Volume

38

Issue

25

fYear

2002

fDate

12/5/2002 12:00:00 AM

Firstpage

1738

Lastpage

1740

Abstract

The design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 7.4 kV, 330 A (pulsed) capability is reported. A highly-doped p-type epitaxial anode layer and junction termination extension were used to obtain good on-state and stable reverse blocking characteristics. A forward voltage drop of 4.5 V was observed at 100 A/cm² (36 A). Measurements in the 25-200°C range show little change in reverse leakage characteristics up to 4.5 kV. Reverse recovery measurements for a forward current density of 100 A/cm² show a modest 33% increase (from 18 to 24 A) in the peak reverse recovery current, and only a 113% increase (from 1.8 to 3.8 μC) in Q_π at 200°C compared to 25°C.

Keywords

current density; leakage currents; p-i-n diodes; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 25 to 200 degC; 330 A; 4.5 V; 7.4 kV; SiC; forward current density; forward voltage drop; high temperature characteristics; junction termination extension; p-type epitaxial anode layer; pin rectifier; reverse blocking characteristics; reverse leakage characteristics; reverse recovery measurements;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20021108

Filename

1137499