• DocumentCode
    971792
  • Title

    Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers

  • Author

    Asada, Minoru ; Itoh, Kenji ; Suematsu, Yasuharu ; Arai, Shigehisa

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    17
  • Issue
    14
  • fYear
    1981
  • Firstpage
    486
  • Lastpage
    487
  • Abstract
    The cavity length dependence of the differential quantum efficiency ¿d of 1.58 ¿m wavelength GaInAsP/InP buried heterostructure lasers was investigated theoretically and experimentally. Theoretical calculations of ¿d taking intervalence band absorption into account is in agreement with the measured results, in which ¿d increases with decreasing the cavity length. The maximum value of ¿d obtained was 53% for the cavity length of 100 ¿m in pulsed operation at room temperature.
  • Keywords
    semiconductor junction lasers; GaInAsP-InP buried heterostructure lasers; cavity length dependence; differential quantum efficiency; intervalence band absorption;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810338
  • Filename
    4245811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971792