Title :
Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers
Author :
Asada, Minoru ; Itoh, Kenji ; Suematsu, Yasuharu ; Arai, Shigehisa
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The cavity length dependence of the differential quantum efficiency ¿d of 1.58 ¿m wavelength GaInAsP/InP buried heterostructure lasers was investigated theoretically and experimentally. Theoretical calculations of ¿d taking intervalence band absorption into account is in agreement with the measured results, in which ¿d increases with decreasing the cavity length. The maximum value of ¿d obtained was 53% for the cavity length of 100 ¿m in pulsed operation at room temperature.
Keywords :
semiconductor junction lasers; GaInAsP-InP buried heterostructure lasers; cavity length dependence; differential quantum efficiency; intervalence band absorption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810338
