Title :
MBE growth of AlGaN/GaN HEMTs with high power density
Author :
Katzer, D.S. ; Binari, S.C. ; Storm, D.F. ; Roussos, J.A. ; Shanabrook, B.V. ; Glaser, E.R.
Author_Institution :
Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
fDate :
12/5/2002 12:00:00 AM
Abstract :
RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 μm gate length have an fT of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; power HEMT; semiconductor growth; wide band gap semiconductors; 1.5 micron; 10 GHz; 2 GHz; AlGaN-GaN; AlGaN/GaN; HEMTs; MBE growth; RF-plasma MBE; SiC; gate length; power density; semi-insulating SiC substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021102
