Title :
Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors
Author :
Wada, M. ; Araki, S. ; Kudou, T. ; Umezawa, T. ; Nakajima, S. ; Ueda, T.
Author_Institution :
R&D Center, Yokogawa Electr. Corp., Tokyo, Japan
fDate :
12/5/2002 12:00:00 AM
Abstract :
The strain-balanced InAsP/lnP/lnGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of +2% strained InAsP wells, InP barriers and -2% strained InGaAs layers, where the strained lnP/InAsP/lnP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; quantum well devices; semiconductor epitaxial layers; InAsP-InP-InGaAs; InAsP/InP/InGaAs; light-absorbing layer; mid-infrared photodetectors; strain-balanced multiple quantum well structures; thin strained InGaAs layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021160
