DocumentCode
971887
Title
Monte Carlo comparison of heterojunction cathode Gunn oscillators
Author
Lee, Chi-Kwan ; Ravaioli, V.
Author_Institution
Beckman Inst., Illinois Univ., Urbana-Champaign, IL, USA
Volume
26
Issue
7
fYear
1990
fDate
3/29/1990 12:00:00 AM
Firstpage
425
Lastpage
427
Abstract
The authors have performed Monte Carlo simulations to investigate the physics of heterojunction cathode Gunn oscillators. They show that a simple heterojunction cathode does not improve the device performance because the Gunn domain matures too quickly. The inclusion of a thin n+ layer at the heterojunction allows the Gunn domain to grow throughout the length of the device. This yields improved performance as was recently experimentally observed.
Keywords
Gunn oscillators; Monte Carlo methods; semiconductor device models; Gunn domain maturity; Monte Carlo simulations; device performance; heterojunction cathode Gunn oscillators; thin n + layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900277
Filename
50209
Link To Document