• DocumentCode
    971887
  • Title

    Monte Carlo comparison of heterojunction cathode Gunn oscillators

  • Author

    Lee, Chi-Kwan ; Ravaioli, V.

  • Author_Institution
    Beckman Inst., Illinois Univ., Urbana-Champaign, IL, USA
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    425
  • Lastpage
    427
  • Abstract
    The authors have performed Monte Carlo simulations to investigate the physics of heterojunction cathode Gunn oscillators. They show that a simple heterojunction cathode does not improve the device performance because the Gunn domain matures too quickly. The inclusion of a thin n+ layer at the heterojunction allows the Gunn domain to grow throughout the length of the device. This yields improved performance as was recently experimentally observed.
  • Keywords
    Gunn oscillators; Monte Carlo methods; semiconductor device models; Gunn domain maturity; Monte Carlo simulations; device performance; heterojunction cathode Gunn oscillators; thin n + layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900277
  • Filename
    50209