A 75-dB $,\cdot,\Omega$ 10-Gb/s Transimpedance Amplifier in 0.18- $\mu$ m CMOS Technology

A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mum complementary metal-oxide-semiconductor process. By adopting an effective gain-bandwidth product (GBW) enhancement technique, pi -type inductor peaking, the measured S ₂₁, transimpedance gain, and bandwidth are 41 dB, 75 dBldrOmega, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate under a maximum output swing of 800 mV _pp and achieve a recorded GBW per DC power of 441.1 GHzldrOmega/mW.