DocumentCode :
971907
Title :
A 75-dB 
10-Gb/s Transimpedance Amplifier in 0.18- 
m CMOS Technology
Author :
Jin, Jun-De ; Hsu, Shawn S H
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Volume :
20
Issue :
24
fYear :
2008
Firstpage :
2177
Lastpage :
2179
Abstract :
A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mum complementary metal-oxide-semiconductor process. By adopting an effective gain-bandwidth product (GBW) enhancement technique, pi -type inductor peaking, the measured S 21, transimpedance gain, and bandwidth are 41 dB, 75 dBldrOmega, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate under a maximum output swing of 800 mV pp and achieve a recorded GBW per DC power of 441.1 GHzldrOmega/mW.
Keywords :
CMOS integrated circuits; amplifiers; integrated optoelectronics; photodetectors; photodiodes; CMOS technology; bandwidth 7.2 GHz; bit rate 10 Gbit/s; capacitance 450 fF; complementary metal-oxide-semiconductor process; gain-bandwidth product enhancement technique; on-chip photodiode capacitance; optical-electrical receiver; pi -type inductor peaking; six-stage transimpedance amplifier; size 0.18 mum; transimpedance gain; Complementary metal–oxide–semiconductor (CMOS); gain-bandwidth product (GBW); inductor peaking; photodiode; transimpedance amplifier (TIA);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2007812
Filename :
4663605
Link To Document :
