Title :
ZnO/SiO2-diaphragm composite resonator on a silicon wafer
Author :
Nakamura, Kentaro ; Sasaki, Hiromu ; Shimizu, Hiroshi
Author_Institution :
Tohoku University, Faculty of Engineering, Sendai, Japan
Abstract :
We report on a thickness-extensional-mode piezoelectric resonator consisting of a ZnO/SiO2 diaphragm supported by a silicon wafer. It is found that the temperature coefficient of frequency can be reduced to zero by adjusting the ZnO/SiO2 thickness ratio. A temperature coefficient of frequency as low as 10 ppm/°C was experimentally obtained.
Keywords :
crystal resonators; silicon compounds; zinc compounds; Si wafer; ZnO/SiO2 diaphragm; temperature coefficient of frequency; thickness-extensional-mode piezoelectric resonator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810355
