DocumentCode :
971995
Title :
A tri-stable-state Josephson device memory cell
Author :
Chan, Hugo W. ; Van Duzer, Theodore ; Erné, S.N.
Author_Institution :
American Microsystem, Inc., Santa Clara, CA
Volume :
15
Issue :
6
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1928
Lastpage :
1932
Abstract :
Described here is a tri-stable-state memory cell using Josephson junctions as switching elements. In contrast to all previously reported superconducting Josephson memories where information is stored in binary form,the tri-stable-state memory cell stores information in ternary form and at higher density than with the conventional bi-stable memory loops. The principle of operation and design criteria are discussed.
Keywords :
Josephson device memories; Clocks; Critical current; Current supplies; Josephson junctions; Laboratories; Power dissipation; Superconducting devices; Switches; Switching circuits; Writing;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1979.1060354
Filename :
1060354
Link To Document :
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