Title :
Monolithically integrated semiconductor LED-amplifier for applications as transceivers in fiber access systems
Author :
Liou, K.Y. ; Glance, B. ; Koren, U. ; Burrows, E.C. ; Raybon, G. ; Burrus, C.A. ; Dreyer, K.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
We have fabricated a monolithically integrated LED-amplifier chip for application as a high-power broad-band transmitter. Amplified LED output of 10 mW and fiber-coupled power of 4 mW was demonstrated. The device can be used as a spectrally-sliced transmitter for wavelength-division-multiplexed networks or as a broad-band transmitter in subcarrier multiple-access systems to eliminate optical beat interference. The amplifier section in the integrated device can also be used as a photodetector. The performance of the device as a transceiver in a WDM multiple-access system operating at a typically proposed local-access data rate of 10 Mb/s was successfully demonstrated.
Keywords :
integrated optoelectronics; light emitting diodes; multi-access systems; optical communication equipment; optical fibre networks; photodetectors; quantum well lasers; subcarrier multiplexing; transceivers; wavelength division multiplexing; 10 Mbit/s; 10 mW; 4 mW; WDM multiple-access system; amplified LED output; amplifier section; broad-band transmitter; fiber-coupled power; high-power broad-band transmitter; integrated device; local-access data rate; monolithically integrated; optical beat interference; photodetector; semiconductor LED-amplifier chip; spectrally-sliced transmitter; subcarrier multiple-access systems; transceivers; wavelength-division-multiplexed networks; Interference elimination; Light emitting diodes; Multiple access interference; Optical amplifiers; Optical devices; Optical fiber devices; Optical fiber networks; Optical transmitters; Stimulated emission; Transceivers;
Journal_Title :
Photonics Technology Letters, IEEE
