Title :
Nonlinear photoconductivity characteristics of antenna activated by 80-picosecond optical pulses
Author :
Liu, D.W. ; Carr, P.H. ; Thaxter, J.B.
Author_Institution :
Rome Lab., Hanscom AFB, MA, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
We report nonlinear characteristics of the radiated field, generated by a gigahertz photoconducting antenna, versus the bias field. For semi-insulating GaAs a saturation phenomenon was observed when the photocarrier population was below 3×10/sup 16//cm3. A set of characteristic curves was obtained as a function of bias field (<12 kV/cm) and optical fluence (<30 μJ/cm2). Fe-doped InP and LTG-GaAs were also investigated for comparisons. The experimental data obtained can be qualitatively analyzed by the bias field depletion effect and electron intersub-band scattering mechanism. This technique can also be utilized as a convenient tool to study the transient electronic behaviour of the photocarriers in the picosecond regime.
Keywords :
antenna radiation patterns; gallium arsenide; high-speed optical techniques; indium compounds; iron; optical saturation; photoconducting devices; photoconducting materials; submillimetre wave antennas; 80 ps; 80-picosecond optical pulses; Fe-doped InP; GaAs; InP:Fe; LTG-GaAs; bias field; bias field depletion effect; characteristic curves; electron intersub-band scattering mechanism; gigahertz photoconducting antenna; nonlinear characteristics; nonlinear photoconductivity characteristics; optical fluence; photocarrier population; photocarriers; picosecond regime; radiated field; saturation phenomenon; semi-insulating GaAs; submm wave generation; transient electronic behavior; Bandwidth; Electromagnetic transients; Gallium arsenide; Indium phosphide; Nonlinear optics; Optical pulse generation; Optical pulses; Optical saturation; Optical scattering; Photoconductivity;
Journal_Title :
Photonics Technology Letters, IEEE
