Title :
High rate pulse generation from InGaAsP laser in selfoc lens external resonator
Author :
Akiba, Shigeyuki ; Williams, G.E. ; Haus, H.A.
Author_Institution :
Massachusetts Institute of Technology, Research Laboratory of Electronics, Department of Electrical Engineering & Computer Science, Cambridge, USA
Abstract :
High rate modulation of an InGaAsP diode laser at rates of 5¿10 GHz was demonstrated using a selfoc microlens external resonator. At a rate of 5.3 GHz modelocked pulses of 30 ps duration were obtained, whereas deeply modulated output was observed at 8.1 and 9.4 GHz rates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical modulation; semiconductor junction lasers; 5 to 10 GHz; 5.3 GHz; 8.1 GHz; 9.4 GHz; InGaAsP diode laser; high rate pulse generation; modelocked pulses; modulation; selfoc lens external resonator; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810369
