Title :
Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes
Author :
Watanabe, I. ; Tsuji, M. ; Hayashi, M. ; Makita, K. ; Taguchi, K.
Author_Institution :
Optoelectron. Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
Reliability tests of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) have been performed by accelerated aging at three different temperatures for the first time. The lifetime of the SL-APDs is estimated to be over 1.0/spl times/10/sup 5/ hours at 50/spl deg/C with a degradation activation energy of 1 eV. These results indicate that the SL-APDs have a reliable lifetime for 2.5-10 Gb/s LAN applications.
Keywords :
III-V semiconductors; ageing; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; life testing; optical communication equipment; optical fibre LAN; semiconductor device reliability; semiconductor superlattices; 1 eV; 2.5 to 10 Gbit/s; 50 C; Gb/s LAN applications; InAlGaAs-InAlAs; accelerated aging; degradation activation energy; lifetime; mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiode reliability; optical fibre LAN networks; reliability tests; reliable lifetime; Accelerated aging; Avalanche photodiodes; Degradation; Life estimation; Lifetime estimation; Local area networks; Performance evaluation; Superlattices; Temperature; Testing;
Journal_Title :
Photonics Technology Letters, IEEE
